Samsung announced a 3nm process chip, saving more than 50% energy, 35% faster than 7nm chip
This new 3nm chip is based on the Gate All Around architecture, which helps bring chips smaller than 45% in size.
Samsung recently announced 3nm chip manufacturing technology, at the Samsung Foundry Forum event on Tuesday. This is a new breakthrough in processor technology, which saves energy by more than 50% while increasing performance by 35% compared to Samsung's existing 7nm chips.
This new 3nm chip is based on the "Gate All Around" architecture, which helps bring chips smaller than 45% in size.
In 2020, Samsung will begin to test the 3nm chip and will mass produce for smartphones and mobile devices by 2021.
A more refined version for high-performance chips must wait until 2022 to be mass-produced.
With GAA technology, the channel will be completely surrounded by the gate instead of blocking the polarity as the current FinFET technology. In Samsung's design, the channels in GAA architecture are flat channels, called nanosheet, while some other manufacturers envision them as extremely small cylinders called nanowires. (nanowires).
Samsung expects this new 3nm chip manufacturing technology, with its energy saving advantages, will help it attract more customers.
Handel Jones, head of International Business Strategies, said that with GAA technology, Samsung is about 12 months ahead of TSMC and 2 to 3 years ahead of Intel.
- Samsung began manufacturing 20nm DRAM 6Gb chips for mobile devices
- Samsung launched a laptop using 45nm chip
- Samsung began mass-producing the world's 'fastest memory' for smartphones
- TSMC is ready for the 5nm process, the first product will be the Apple A14 Bionic?
- Samsung is ready to pump an additional $ 116 billion for the battle in the mobile chip market
- Exynos 9820: Samsung's first SoC chipset manufactured on 8nm FinFET process, has separate AI chip, improves performance