Intel and Micron Cooperated to Release QLC NAND Memory to Increase Storage Density

This article examines Intel and Micron Cooperated to Release QLC NAND Memory to Increase Storage Density. It presents the main facts, practical implications, and key points in a clearer, easier-to-follow format.

Understanding Intel and Micron Cooperated to Release QLC NAND Memory to Increase

In partnership with Micron Technology, Intel has just announced it is ready to release a 3D NAND semiconductor 4bits/cell (each cell stores 4 bits of data). Increasing density helps each base to hold 1 terabit of data and is currently the largest capacity flash memory available today.

QLC has 33% higher storage density than TLC (3bits/cell). QLC products from Intel and Micron still use 64 layers of 2nd generation 3D NAND.

Intel and Micron aim to increase the number of classes to 96 in 3rd-generation NAND memory but still use the popular TLC technology in the overlap layering effort. Both QLC 64 layers and TLC 96 layers use CMOS under the array to keep the semiconductor size small and always check the level of operation.

QLC NAND leads the market with 4 bits per cell.

The new semiconductor has 4 planes instead of 2 layers as usual. This helps read/write more cells in parallel, providing greater bandwidth and resulting in faster overall speeds for the entire system.

'The commercialization of 1Tb 4bits/cell is an important milestone in NVM's history, thanks to many innovations in technology and design aimed at bringing more possibilities for Floating Gate 3D NAND' technology, RV Giridhar, deputy Intel said.

Whether cloud applications and data centers will benefit the most from this new technology, users will also benefit. Reducing costs when increasing storage density will help reduce overall costs, though it will take time before market launches.

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