This Gen4 NVMe SSD has a self-destruct mechanism when needed, but for good reason.

Team Group has just launched the new INDUSTRIAL P250Q Self-Destruct SSD - a device that combines hardware and software data deletion mechanisms with independent self-destruct circuitry. Thanks to this dual data destruction approach, the drive has just won the Best Choice Award 2025 at COMPUTEX in the Cybersecurity category.

 

Team Group points out that organizations that rely solely on data erasure software often experience intermittent or incomplete erasures when power is lost. Their solution is to integrate proprietary 'attack' destruction circuitry directly into the Flash chip, ensuring data erasure at the hardware level.

At the same time, the intelligent software system will automatically resume the deletion process after a power failure, helping to protect confidential, classified or proprietary information to the point where it cannot be recovered even if interrupted.

 

Even though it's not for the average user, it's still an extremely interesting product because in the future, similar technology could be applied to mass users.

This Gen4 NVMe SSD has a self-destruct mechanism when needed, but for good reason. Picture 1

On the hardware side, the P250Q features a one-touch trigger button and multi-level LEDs. These provide real-time progress feedback—from initial command to completion—so IT staff can confirm data deletion without the need for specialized tools.

The INDUSTRIAL P250Q Self-Destruct SSD's data self-destruct feature works in the following way:

  1. Activate self-destruct with one button
  2. Smart double erase mechanism (hardware + software)
  3. Independent destroy circuit targeting Flash chip
  4. Auto resume deletion after power failure
  5. Multi-level LED displays real-time progress

 

In terms of specifications, the P250Q uses the PCIe Gen4x4 interface with NVMe 1.4 standard, achieving sequential read speeds of up to 7,000 MB/s and write speeds of 5,500 MB/s, supporting important tasks. The drive has capacities of 256GB, 512GB, 1TB and 2TB, using 112-layer 3D TLC NAND Flash memory.

Specifications

Detail

Model

P250Q-M80 M.2 PCIe SSD

Size

M.2 2280

Communication & Protocol

PCIe Gen4×4, NVMe 1.4

Capacity

256GB / 512GB / 1TB / 2TB

Flash Memory

112-layer 3D TLC NAND

Sequential speed

Read: up to 7,000 MB/s

Write: up to 5,500 MB/s

Durability & Reliability

MTBF: > 3 million hours

P/E cycle: 3K times

Shock resistant

Operation: 50G/11ms (MIL-STD-202G)

Idle: 1,500G/0.5ms (MIL-STD-883K)

Anti-vibration

Operation: 7.69 Grms, 20–2,000 Hz (MIL-STD-810G)

Idle: 4.02 Grms, 15–2,000 Hz

Operating temperature

0°C to 70°C

Storage temperature

–40°C to 85°C

Humidity

5% ~ 95%

Along with the P250Q, Team Group was also granted a US patent 12283335 B2 for its wide-temperature M.2 SSD technology. This technology automatically adjusts data transfer speeds across three thermal zones, maintaining stable operation in environments from 85°C to 105°C without throttling.

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